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Samsung introduced GDDR7 memory in 3GB modules - one and a half times bigger and twice as fast

Samsung has announced the development of the "first in the industry" 24-gigabit (3 gigabytes) GDDR7 memory for graphics cards, which supports speeds exceeding 40 Gbps. The new memory is faster and, crucially, offers a larger capacity in a single modu...

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Samsung HBM chips fail Nvidia tests due to high power consumption and heat dissipation issues - Reuters

The latest Samsung HBM (high bandwidth memory) chips failed Nvidia tests for suitability for use in artificial intelligence accelerators. The issue is that such chips consume too much energy and generate too much heat. This was stated by three knowle...

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SK hynix announces 300TB SSD and other technologies for data centers and AI

SK hynix announced at a press conference in Seoul that they are creating a massive 300TB SSD. The solid-state drive was unveiled as part of a wide portfolio of devices and technologies for data centers and AI. The company believes that the total volu...

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DRAM and NAND in one chip - researchers have created phase change memory that doesn't consume much power

Researchers from the Korea Advanced Institute of Science and Technology (KAIST) in South Korea have developed a new type of phase-change memory without the drawbacks of previous iterations of this technology. Phase-change memory, abbreviated as PCM, ...

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Samsung launched production of next-generation V-NAND memory: +33% performance, -10% power consumption

Samsung has announced the start of mass production of the 9th generation V-NAND flash memory, which offers a 33% increase compared to the current one. This month, TCL V-NAND production with a capacity of 1 Tb will start, QLC will be available in the ...

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