Samsung launched production of next-generation V-NAND memory: +33% performance, -10% power consumption

Samsung has announced the start of mass production of the 9th generation V-NAND flash memory, which offers a 33% increase compared to the current one. This month, TCL V-NAND production with a capacity of 1 Tb will start, QLC will be available in the second half of 2024. Earlier, unofficial sources confirmed the start of production, which also revealed that the memory has over 290 layers. "We are pleased to introduce the industry's first 9th generation V-NAND, which will be a step forward for future applications. To meet the needs for NAND flash memory solutions, Samsung has pushed the boundaries in cell architecture and operational scheme for our next-generation product. With our latest V-NAND, Samsung will continue to set trends in the high-performance, high-density solid-state drive (SSD) market that meet the needs of the future AI generation," said SungHoi Hur, head of Samsung Electronics' flash product and memory technology division. According to the company, the bit density of the 9th generation V-NAND is approximately 50% higher compared to the 8th generation. New technologies to avoid interference in cells and extend cell lifespan have improved memory quality and reliability, while eliminating dummy holes in the channels has significantly reduced the cell area. Samsung's channel hole etching technology creates electronic paths through layer stacking with a mold and maximizes manufacturing productivity by allowing the highest industry amount of cell layers to be simultaneously processed in a double structure. The 9th generation V-NAND is equipped with the new generation NAND Toggle 5.1 flash interface, which supports increased data input/output speed by 33% to 3.2 Gbps. Energy consumption has been improved by 10%.